Correlation between deep-level defects and functional properties of β-(Sn<i>_x</i>Ga_1-<i>x</i>)₂O₃ on Si photodetectors

Heterogeneous integration of β-(Sn x Ga 1− ) 2 O 3 (TGO) UV-C photodetectors on silicon substrates by molecular beam epitaxy is demonstrated. Multimodal electron microscopy and spectroscopy techniques reveal a direct correlation between structural, compositional, optical properties TGO the functional photodetectors. Wavelength dispersive x-ray results accurately determine Sn concentrations ( x) in region 0.020, room temperature cathodoluminescence (CL) hyperspectral imaging shows changes CL emission intensity compared with sample no Sn. Alloying shown to quench red enhance blue emission. The increase corresponds rise V -related deep acceptors responsible for high gain observed detectors. A nucleation layer improve surface quality give better device grown directly onto Si substrate, including higher specific detectivity order 10 12 Jones.